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Printing M3D
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3D integration is regularly mentioned for its potential in decreasing costs, variability and delay in interconnections limiting nowadays IC’s performance. 3D monolithic integration (M3D) is the only option enabling a full use of the third dimension at the cell scale thanks to its high alignment precision.
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At the CMOS cell level 3D monolithic integration offers the unique additional benefit to allow for an independent optimization of n-FET and p-FET allowed by stacking entire p-FET onto n-FET layers suppressing thus lots of technological challenges.
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Within this context 3D monolithic integration appears as an opportunity both for next-generation semiconductors over Si integration.
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Our research is aimed to develop printing-based M3D integration of various electronic circuits on Si or Non-Si CMOS.
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